X-Ray Topographic Investigation of Strain Field Generated by 200 MeV Ag~(14+)Ions in GaAs (100)

摘要

Structural changes in GaAs (100) wafers irradiated with high energy (200 Mev) heavy ions have been studied using X-ray topography. By choosing suitable diffraction vectors it has been possible to explore lattice distortion in the inelastic and elastic loss regions separately. A part from the expected strain in the elastic loss region, lattice strain has also been found in the in the top surface layer which has suffered large inelastic energy loss. A novel diffraction effect observed in these samples could be used to estimate the depth of the damaged layers caused by the elastic and inelastic energy loss processes. Also, the contrast observed at the boundaries of irradiated and marked regions in transmission topographs is consistent with the lateral expansion of the irradiated regions.