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Temperature dependent electron-phonon coupling and heat capacity in thin slabs of topological insulator Bi_2Te_3 as pertinent to the thermal spike model

机译:与热尖峰模型有关的拓扑绝缘体Bi_2Te_3的薄板中与温度有关的电子-声子耦合和热容

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Electron-phonon coupling strength and electronic heat capacity are essential ingredients of the widely accepted thermal spike model of swift heavy ion matter interaction. The concept, although applicable very well in metals, loses its validity in materials with a band gap, wherein it is customary to take the two quantities merely as adjustable parameters to fit the experimental results. Topological insulators, like Bi_2Te_3, are quite interesting in this regard because they are also metallic albeit near the surface. In this work, we compute by first-principles the electron density of states of ~16 A thick Bi_2Te_3 slabs of different orientations and demonstrate an unusually high metallicity for the [001] slab. The density of states is then used to calculate the electron-phonon coupling strength and electronic heat capacity as a function of electron temperature. Strongly electron temperature dependent but weak electron-phonon coupling has been observed, along with systematic deviations of the electronic heat capacity from the linear free-electron metal values.
机译:电子-声子耦合强度和电子热容量是迅速被重离子相互作用的广为接受的热尖峰模型的基本要素。尽管该概念非常适用于金属,但在具有带隙的材料中失去了其有效性,其中习惯上仅将这两个量作为可调整参数以适合实验结果。像Bi_2Te_3这样的拓扑绝缘体在这方面非常有趣,因为它们在表面附近也是金属的。在这项工作中,我们通过第一性原理计算了不同方向的〜16 A厚Bi_2Te_3平板的态的电子密度,并证明了[001]平板具有异常高的金属性。然后,使用状态密度来计算电子-声子耦合强度和电子热容随电子温度的变化。已经观察到强电子温度依赖性但弱的电子-声子耦合,以及电子热容量与线性自由电子金属值的系统偏差。

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