Damage effects in 6H-SiC single crystals by Si&H dual ion irradiation: A combined Raman and XRD study

摘要

6H-SiC single crystals were implanted with Si and H single and dual ion beams at room temperature to study synergistic effects. 600 keV Si ions with a fluence of 5 × 10~(14) cm~(-2) and 75 keV H ions with fluences of 1 × 10~(15) cm~(-2) and 5 × 10~(15) cm~(-2) were used. The damage states and strain build-up in the as-implanted samples were characterized by Raman spectroscopy combined with high-resolution X-ray diffraction (HRXRD). Irradiation sequences of dual ions influence the damage states significantly. Si + H successively irradiations result in larger damage level, while H + Si successively irradiations give a higher strain level. These results indicate that the damage effects are highly related to irradiating ion species, ion fluences, and irradiation sequences.