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Equal-double junctions in 24 GeV/c proton-irradiated MCZ n- and p-type Si detectors: A systematic transient current technique investigation

机译:24 GeV / c质子辐照的MCZ n型和p型Si探测器中的等双结:系统瞬态电流技术研究

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We undertook systematic transient current technique (TCT) studies, measuring the shapes of electron-and hole-transient currents in three sets of samples irradiated by 24 GeV/c protons at fluences 1.6 × 10~(14)-2.4 × 10~(15) p/cm~2. We carried out these measurements after leaving the samples to anneal for 22-23 days at room temperature. The three sets comprised (1) magnetic Czochralski (MCZ) n-type Si detectors; (2) MCZ p-type Si detectors; and (3) float-zone (FZ) n-type Si detectors (control set). The control set showed no surprises. The space charge sign inversion (SCSI) had already occurred at the lowest fluence (1.6 × 10~(14) p/cm~2), and the double junction/double peak effect was readily apparent, with the first junction, the minor one, near the p~+ contact, which changes very little with bias voltages. It is superseded by the second junction near the n~+ contact (negative space charge) at biases higher than the full-depletion voltage. For both MCZ n-type and p-type detectors, the double junction/double peak effect also was initiated at the lowest fluence, but the standard SCSI evident in FZ n-type detectors (wherein the negative space charge dominates the entire detector) was not seen in that fluence range. However, in these two groups, the double junction/peak effect persisted into subsequent higher fluences with almost equal junctions near the p~+ and n~+ contacts, regardless of bias voltages, which may be much larger than the full-depletion voltages. This new effect, termed the equal-double-junction effect, is unique for the 24 GeV/c proton-irradiated MCZ (n and p) Si detectors. It is evident by the almost identical shapes in TCT currents, before trapping corrections, for both electrons (red laser on the p~+ contact) and holes (on the n~+ contact), with the first peak always dominating a small second peak at any bias voltages. After trapping corrections, the heights of the two peaks are about the same, suggesting the existence of nearly equal-double junctions in the detector.
机译:我们进行了系统的瞬时电流技术(TCT)研究,测量了24 GeV / c质子在注量1.6×10〜(14)-2.4×10〜(15)照射的三组样品中电子和空穴瞬态电流的形状)p / cm〜2。我们将样品在室温下退火22-23天后进行了这些测量。这三套装置包括(1)磁性直拉(MCZ)n型Si检测器; (2)MCZ p型硅探测器; (3)浮区(FZ)n型硅探测器(控制装置)。对照组没有显示出任何意外。空间电荷符号反转(SCSI)已经以最低注量(1.6×10〜(14)p / cm〜2)发生,并且双结/双峰效应显而易见,第一个结是次要的在p〜+触点附近,随偏置电压变化很小。在高于全耗尽电压的偏置下,它被n〜+触点附近的第二结(负空间电荷)所取代。对于MCZ n型探测器和p型探测器,双结/双峰效应也以最低注量启动,但是FZ n型探测器中明显的标准SCSI(其中负空间电荷占整个探测器的主导)是在该通量范围内看不到。但是,在这两组中,双结/峰效应一直持续到随后的更高通量,在p〜+和n〜+触点附近具有几乎相等的结,而与偏置电压无关,偏置电压可能比全耗尽电压大得多。这种新的效应称为等双结效应,对于24 GeV / c质子辐照的MCZ(n和p)Si探测器而言是独一无二的。通过电子(p〜+触点上的红色激光)和空穴(n〜+触点上的空穴)的校正校正之前,TCT电流的形状几乎完全相同,第一个峰值始终占较小的第二个峰值在任何偏置电压下。进行陷波校正后,两个峰的高度大致相同,这表明检测器中存在几乎相等的双结。

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