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Biparametric correction methods using two shapers for In/CdTe/Pt radiation detector

机译:使用两个整形器进行In / CdTe / Pt辐射探测器的双参数校正方法

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Biparametric correction methods have reportedly been used to improve the energy resolutions of CdTe or CdZnTe radiation detectors. There are two methods for the correction. One is a method that uses the rise time and pulse height, and the other is a method that uses two pulse heights acquired from a fast and a slow shaper. The latter one for a 2.3-mm-thick In/CdTe/Pt radiation detector was investigated for this paper. The polarization effect resulting in short-term instability in the energy spectrum should be resolved before an In/CdTe/Pt detector is used. A pulsed bias voltage shutdown technique was used with the two shaper biparametric correction method to overcome both the polarization effect and the incomplete carrier collection. An energy resolution of 4.6% for a 122 keV peak was observed for a 2.3-mm-thick In/CdTe/Pt detector at 35 ℃ for 2 h after applying a bias voltage of - 800 V. Furthermore, the energy resolutions are improved for all the photo peaks when a constant correction factor is applied to the five photo peaks in the energy range 59.5-1333 keV.
机译:据报道,双参数校正方法已用于提高CdTe或C​​dZnTe辐射探测器的能量分辨率。有两种校正方法。一种是使用上升时间和脉冲高度的方法,另一种是使用从快速和慢速整形器获取的两个脉冲高度的方法。本文研究了后一种用于2.3 mm厚的In / CdTe / Pt辐射探测器。在使用In / CdTe / Pt检测器之前,应解决导致能谱短期不稳定的极化效应。脉冲偏压关闭技术与两个整形器双参数校正方法一起使用,可以克服极化效应和不完整的载流子收集。在施加-800 V偏置电压后,在35℃下于2.3毫米厚的In / CdTe / Pt检测器在2个小时内观察到122 keV峰的能量分辨率为4.6%。当对能量范围为59.5-1333 keV的五个光峰施加恒定校正因子时,所有光峰均会出现。

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