机译:总剂量辐射损伤引起的COTS阵列电荷耦合器件饱和输出的降低
State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, P.O. Box 69-10 Xi'an, China;
State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, P.O. Box 69-10 Xi'an, China;
State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, P.O. Box 69-10 Xi'an, China;
State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, P.O. Box 69-10 Xi'an, China;
State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, P.O. Box 69-10 Xi'an, China;
State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, P.O. Box 69-10 Xi'an, China;
Charge-coupled devices (CCD); Total dose; Saturation output voltage; Anneal;
机译:总电离剂量辐射损伤对COTS线性CCD的降解评估
机译:剂量率对Co-60γ射线曝光的阵列CCD的剂量率影响导致饱和输出衰减和退火测试
机译:在低地球轨道上观测到的辐射诱发的商用现货(COTS)设备的退化
机译:总电离剂量效应及对电荷耦合器件饱和输出电压的破坏机理
机译:SiGe PMOS器件上的总电离剂量辐射效应和负偏置温度不稳定性
机译:使用氟处理的MOHOS改善总电离剂量辐射传感器的性能
机译:通过电离剂量辐射损伤诱导的COT线性CCD的降解评价
机译:电荷耦合器件(CCD)和电荷注入器件(CID)成像器中的辐射感应噪声。