首页> 外文期刊>Nuclear Instruments & Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment >ATLAS17LS - A large-format prototype silicon strip sensor for long-strip barrel section of ATLAS ITk strip detector
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ATLAS17LS - A large-format prototype silicon strip sensor for long-strip barrel section of ATLAS ITk strip detector

机译:ATLAS17LS - 用于ATLAS ITK RIST探测器的长带筒段的大型原型硅条传感器

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摘要

The ATLAS experiment is going to replace the current Inner Detector with an all new inner tracker (ITk) in the ATLAS detector for HL-LHC at CERN. Silicon strip detectors cover the outer layers of the barrel and the endcap sections. We have designed and fabricated a prototype single-sided n~+-in-p AC-coupled silicon strip sensor for the outer barrel layer with long strips (LS), ATLAS17LS. It is of the maximum allowable size to fit in a 6-in. silicon wafer, with an outer dimension of 9.80 (width)×9.76 (length)cm~2. The sensor features two rows of LS strip segments, 4.83 cm strip length per segment, a strip pitch of 75.5 μm, and a slim edge design. We have implemented technology for high voltage operation of up to 1000 V, with a good signal collection after irradiation fluence of 5.6 × 10~(14) n_(eq)/cm~2 at the end of HL-LHC operation. We had two objectives for the ATLAS17LS fabrication: qualification of the sensor design and fabrication quality, and providing an adequate number of the sensors for prototyping the building blocks of the strip detector. The sensors were fabricated in 3 batches by HPK with standard wafers from the foundry (320 μm physical thickness). Additional 10 sensors were fabricated with a thinner active thickness of 240 μm to investigate the influence of active thickness on charge collection. Another additional 5 sensors, with special passivation to investigate the influence of passivation on humidity sensitivity. The visual inspection of fabricated sensors revealed an inadequacy that the designed metal width of 10 μm was too narrow. The initial measurements by the vendor showed that the sensors fulfilled the specifications: onset voltages of Microdischarge V_(MD) above the operation voltage V_(OP) (700 V for the 1st and 2nd batches; 500 V for the 3rd batch, which has improved the yield), leakage currents of < 0.1 μA/cm~2 at V_(OP), full depletion voltages V_(FD) < 330 V, and rates of bad strips <<1%.
机译:ATLAS实验将在CERN的HL-LHC中使用全新内部跟踪器(ITK)用全新内部跟踪器(ITK)更换当前内部检测器。硅条探测器覆盖枪管的外层和端盖部分。我们已经设计和制造了具有长条(LS),ATLAS17LS的外筒层的原型单侧N〜+ -IN-P-C耦合硅条传感器。它是最大允许的尺寸,适合在6英寸中。硅晶片,外部尺寸为9.80(宽度)×9.76(长度)cm〜2。传感器具有两排LS条带段,4.83厘米条带,每个段,条距为75.5μm,纤维边缘设计。我们已经实现了高达1000 V的高压操作技术,在HL-LHC操作结束时照射流量为5.6×10〜(14)N_(EQ)/ cm〜2的良好信号收集。我们对ATLAS17LS制造有两个目标:传感器设计和制造质量的资格,并提供了用于原型设计条带探测器的构件块的传感器数量的足够数量。通过HPK用来自铸造铸造件的标准晶片(320μm物理厚度),用HPK制造传感器。额外的10个传感器具有240μm的较薄有效厚度,以研究活性厚度对电荷收集的影响。另一种额外的5个传感器,具有特殊的钝化来研究钝化对湿度敏感性的影响。制造传感器的目视检查揭示了设计的金属宽度为10μm的不足。供应商的初始测量表明,传感器满足了规格:微电机电压V_(MD)的开始电压V_(OP)(对于第1和第2批次为700V; 500V用于第3批,这改善了第3批产量),V_(OP)下<0.1μA/ cm〜2的漏电流,完全耗尽电压V_(FD)<330V,以及坏条带 1%。

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  • 作者单位

    Institute of Particle and Nuclear Study High Energy Accelerator Research Organization (KEK) 1 -1 Oho Tsukuba Ibaraki 305-0801 Japan;

    Solid State Division Hamamatsu photonics K.K. 1126-1 Ichino-cho Higashi-ku Hamamatsu-shi Shizuoka 435-8558 Japan;

    Santa Cruz Institute for Particle Physics (SCIPP) University of California Santa Cruz CA 95064 USA;

    School of Physics and Astronomy University of Birmingham Birmingham B152TT United Kingdom;

    DESY Zeuthen Platanenallee 6 15738 Zeuthen Germany;

    School of Physics and Astronomy the University of Glasgow University Avenue Glasgow G12 8QQ United Kingdom;

    Santa Cruz Institute for Particle Physics (SCIPP) University of California Santa Cruz CA 95064 USA;

    Centro Nacional de Microelectronica (IMB-CNM CSIC) Campus UAB-Bellaterra 08193 Barcelona Spain;

    DESY Harnburg Notkestrasse 85 22607 Hamburg Germany;

    Lawrence Berkeley National Laboratory Cyclotron Road Berkeley CA 94720 USA;

    Institute of Pure and Applied Sciences University of Tsukuba 1-1-1 Tennodai Tsukuba Ibaraki 305-8571 Japan;

    Cavendish Laboratory University of Cambridge JJ Thomson Avenue Cambridge CB3 0HE United Kingdom;

    Solid State Division Hamamatsu photonics K.K. 1126-1 Ichino-cho Higashi-ku Hamamatsu-shi Shizuoka 435-8558 Japan;

    Physics Department Carleton University 1125 Colonel By Drive Ottawa Ontario K1S 5B6 Canada;

    Institut fuer Physik Humboldt-Universitaet zu Berlin Newtonstrasse 15 12489 Berlin Germany;

    Queen Mary University of London Mile End Road London E1 4NS United Kingdom;

    Physikalisches Institut Albert-Ludwigs-Universitaet Freiburg Hermann-Herder-Str. 3 79104 Freiburg-im-Breisgau Germany;

    Particle Physics Department STFC Rutherford Appleton Laboratory Harwell Science and Innovation Campus Didcot United Kingdom;

    Centro Nacional de Microelectronica (IMB-CNM CSIC) Campus UAB-Bellaterra 08193 Barcelona Spain;

    Solid State Division Hamamatsu photonics K.K. 1126-1 Ichino-cho Higashi-ku Hamamatsu-shi Shizuoka 435-8558 Japan;

    Institute of High Energy Physics (IHEP) and the Chinese Academy of Sciences 19B Yuquan Road Beijing 100049 China;

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  • 正文语种 eng
  • 中图分类
  • 关键词

    n-in-p; p-type; Strip; Silicon; Radiation tolerant; HL-LHC;

    机译:n-in-p;p型;条;硅;辐射耐受;HL-LHC;

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