首页> 外国专利> SILICON STRIP PHOTO-SENSOR AND 2D-POSITION AND ENERGY MEASUREMENTS OF THE RADIATION DETECTOR USING THE SAME

SILICON STRIP PHOTO-SENSOR AND 2D-POSITION AND ENERGY MEASUREMENTS OF THE RADIATION DETECTOR USING THE SAME

机译:硅带光电传感器以及使用该传感器的辐射探测器的二维位置和能量测量

摘要

PURPOSE: A strip optical sensor, and a detector for detecting the two-dimensional position and energy of the radiation using the same are provided to detect the energy and position information of light with low cost by forming a light-receiving layer on the whole surface with a PIN diode structure. CONSTITUTION: A strip optical sensor(100) comprises a semiconductor substrate(110), an impurity layer(120), a detection layer(130), an anti-reflective layer(140), and an electrode(132). The semiconductor substrate is composed of base materials. The impurity layer is formed on the upper surface of the semiconductor substrate. The detection layer is formed on the lower surface of the semiconductor substrate by strip. The anti-reflective layer is laminated on the upper surface of the impurity layer.
机译:目的:提供一种带状光学传感器以及使用该光学传感器检测辐射的二维位置和能量的检测器,以通过在整个表面上形成光接收层来低成本地检测光的能量和位置信息。具有PIN二极管结构。构成:条形光学传感器(100)包括半导体衬底(110),杂质层(120),检测层(130),抗反射层(140)和电极(132)。半导体基板由基材构成。杂质层形成在半导体衬底的上表面上。检测层通过条带形成在半导体基板的下表面上。抗反射层被层压在杂质层的上表面上。

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