Characterization of small-pixel passive CMOS sensors in 150 nm LFoundry technology using the RD53A readout chip

摘要

Passive CMOS pixel sensors in 150 nm CMOS technology offered by LFoundry were designed and assembled into hybrid pixel modules. Advantages of commercial CMOS processes are high throughput at comparatively low costs which makes them attractive for the usage of large-area detectors. Further benefits originate from multiple metal layers, metal-insulator-metal capacitors, and polysilicon layers which can be used to enhance the sensor design. Thinned sensors were bump-bonded to the RD53A readout chip and characterized in laboratory environment and with a minimum ionizing 2.5 GeV electron beam. Their performance in terms of noise and hit-detection efficiency equals that of conventional planar pixel sensors.