首页> 外文期刊>Nuclear Instruments & Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment >CMOS monolithic pixel sensors based on the column-drain architecture for the HL-LHC upgrade
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CMOS monolithic pixel sensors based on the column-drain architecture for the HL-LHC upgrade

机译:基于HL-LHC升级的列漏架构的CMOS单片像素传感器

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Depleted Monolithic Active Pixel Sensors (DMAPS) constitute a promising low cost alternative for the outer layers of the ATLAS experiment Inner Tracker (ITk). Realizations in modern, high resistivity CMOS technologies enhance their radiation tolerance by achieving substantial depletion of the sensing volume. Two DMAPS prototypes that use the same "column-drain" readout architecture and are based on different sensor implementation concepts named LF-Monopix and TJ-Monopix have been developed for the High Luminosity upgrade of the Large Hadron Collider (HL-LHC).LF-Monopix was fabricated in the LFoundry 150 nm technology and features pixel size of 50 x 250 mu m(2) and large collection electrode opted for high radiation tolerance. Detection efficiency up to 99% has been measured after irradiation to 1.10(15) n(eq)/cm(2). TJ-Monopix is a large scale (1 x 2 cm(2)) prototype featuring pixels of 36 x 40 mu m(2 )size. It was fabricated in a novel TowerJazz 180 nm modified process that enables full depletion of the sensitive layer, while employing a small collection electrode that is less sensitive to crosstalk. The resulting small sensor capacitance (= 3 fF) is exploited by a compact, low power front end optimized to meet the 25 ns timing requirement. Measurement results demonstrate the sensor performance in terms of Equivalent Noise Charge (ENC) approximate to 11e(-), threshold approximate to 300 e(-), threshold dispersion approximate to 30 e(-) and total power consumption lower than 120 mW/cm(2).
机译:耗尽的单片活性像素传感器(DMAPS)构成了Atlas实验内部跟踪器(ITK)的外层的有希望的低成本替代方案。现代高电阻率CMOS技术的实现通过实现感测体积的大量消耗来增强它们的辐射耐受性。使用相同“列 - 漏极”读数架构的两个DMAPS原型并基于名为LF-MonoPix和TJ-MonoPix的不同传感器实现概念,为大型Hadron撞机(HL-LHC)的高发光度升级而开发了.LF -MONOPIX在LFOUNDRY 150NM技术中制造,并且具有50×250μm(2)的像素尺寸和选择高辐射容限的大型收集电极。在照射到1.10(15)n(EQ)/ cm(2)后,测量了高达99%的检测效率。 TJ-MonoPix是大规模的(1 x 2 cm(2))原型,具有36 x 40 mu m(2)尺寸的像素。它是在新颖的塔楼180nm修改过程中制造,其能够完全耗尽敏感层,同时采用对串扰敏感的小收集电极。由此产生的小传感器电容(<= 3 FF)通过结构紧凑,低功耗前端进行了优化,以满足25 ns定时要求。测量结果表明,在等效噪声电荷(ENC)近似到11E( - ),近似为300 e( - )的阈值,阈值分散近似为30 e( - )和低于120 mw / cm的总功耗(2)。

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