首页> 外文期刊>Nuclear Instruments & Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment >CMOS monolithic pixel sensors based on the column-drain architecture for the HL-LHC upgrade
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CMOS monolithic pixel sensors based on the column-drain architecture for the HL-LHC upgrade

机译:基于列漏架构的CMOS单片像素传感器,用于HL-LHC升级

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Depleted Monolithic Active Pixel Sensors (DMAPS) constitute a promising low cost alternative for the outer layers of the ATLAS experiment Inner Tracker (ITk). Realizations in modern, high resistivity CMOS technologies enhance their radiation tolerance by achieving substantial depletion of the sensing volume. Two DMAPS prototypes that use the same "column-drain" readout architecture and are based on different sensor implementation concepts named LF-Monopix and TJ-Monopix have been developed for the High Luminosity upgrade of the Large Hadron Collider (HL-LHC).LF-Monopix was fabricated in the LFoundry 150 nm technology and features pixel size of 50 x 250 mu m(2) and large collection electrode opted for high radiation tolerance. Detection efficiency up to 99% has been measured after irradiation to 1.10(15) n(eq)/cm(2). TJ-Monopix is a large scale (1 x 2 cm(2)) prototype featuring pixels of 36 x 40 mu m(2 )size. It was fabricated in a novel TowerJazz 180 nm modified process that enables full depletion of the sensitive layer, while employing a small collection electrode that is less sensitive to crosstalk. The resulting small sensor capacitance (= 3 fF) is exploited by a compact, low power front end optimized to meet the 25 ns timing requirement. Measurement results demonstrate the sensor performance in terms of Equivalent Noise Charge (ENC) approximate to 11e(-), threshold approximate to 300 e(-), threshold dispersion approximate to 30 e(-) and total power consumption lower than 120 mW/cm(2).
机译:耗尽型单块有源像素传感器(DMAPS)构成了ATLAS实验内部跟踪器(ITk)外层的有希望的低成本替代方案。现代的高电阻率CMOS技术的实现通过实现感应体积的显着耗尽来提高其辐射耐受性。为大型强子对撞机(HL-LHC)的高光度升级,已经开发了两个使用相同的“柱漏”读数架构并基于不同的传感器实现概念的DMAPS原型,它们分别名为LF-Monopix和TJ-Monopix。 .LF-Monopix采用LFoundry 150 nm技术制造,其像素尺寸为50 x 250μm(2),并选择了大型收集电极以实现高辐射耐受性。辐射至1.10(15)n(eq)/ cm(2)后,测量效率高达99%。 TJ-Monopix是一种大型(1 x 2 cm(2))原型,其像素大小为36 x 40μm(2)。它采用新颖的TowerJazz 180 nm修改工艺制造,该工艺能够完全耗尽敏感层,同时采用对串扰不敏感的小型收集电极。紧凑,低功耗的前端可以利用由此产生的较小的传感器电容(<= 3 fF)进行优化,以满足25 ns的时序要求。测量结果表明,传感器的等效噪声电荷(ENC)近似为11e(-),阈值近似为300 e(-),阈值色散近似为30 e(-),总功耗低于120 mW / cm (2)。

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