Effects of surface treatment on static characteristics of In/Cd_(1_x)Zn_xTe/In and In/Cd_(1_x)Mn_xTe/In devices

摘要

Surface preparation is an important step in the fabrication process of metal/semiconductor/metal (MSM) Cd_(1_x)Zn_xTe and Cd_(1_x)Mn_xTe room-temperature radiation detectors. The quality of metal/semiconductor interface significantly affects the device's performance both, static and dynamic. In this work, we present a comprehensive correlation starting from surface preparation technique to chemical surface composition, through surface potential, and eventually to current-voltage dependence (I-V). We also compare this correlation between Cd_(1_x)Zn_xTe and Cd_(1_x)Mn_xTe. It was found that cadmium-rich surfaces lead to low surface potential and sub-linear I-V curves, whereas tellurium rich or stoichiometric surfaces yield higher surface potential.