Impact of surface treatments on Ⅰ-Ⅴ characteristics in Cd_(1-x)Zn_x and Cd_(1-x)Mn_xTe crystals

摘要

In this work, we focused on studying the impact of different surface treatments for Cd1-xZnx (CZT) and Cd1-xMnx (CMT) samples with indium evaporated contacts, specifically: mechanical polishing (MP), mechanochemical polishing (MCP) and mechanical polishing followed by the chemical etching (MP+Et). We examined 3 samples in each group of Cd0.85Zn0.15Te and 3 samples in each group of Cd0.93Mn0.07Te. Devices were consecutively characterized by current-voltage dependence (I-V). The measured characteristics revealed that for CMT both surface treatments, including chemical exposure to bromine ethylene glycol in MCP or bromine methanol in etching, resulted in linear I-V characteristic consistent with the bulk resistance. At the same time, chemical treatments of CZT samples dramatically increased their current densities (up to several mu A/cm(2)).