机译:低和高通量氘等离子体暴露后钨的表面形态和氘保留
FOM institute DIFFER, Association EURATOM-FOM, Trilateral Euregio Cluster, NL-3439 MN Nieuwegein, the Netherlands;
Max-Planck-Institut fuer Plasmaphysik, Boltzmannstrasse 2, D-85748 Garching, Germany;
Max-Planck-Institut fuer Plasmaphysik, Boltzmannstrasse 2, D-85748 Garching, Germany;
Max-Planck-Institut fuer Plasmaphysik, Boltzmannstrasse 2, D-85748 Garching, Germany;
Max-Planck-Institut fuer Plasmaphysik, Boltzmannstrasse 2, D-85748 Garching, Germany;
FOM institute DIFFER, Association EURATOM-FOM, Trilateral Euregio Cluster, NL-3439 MN Nieuwegein, the Netherlands,Van 't Hoff Institute for Molecular Sciences, University of Amsterdam, Science Park 904,NL-1098 XH Amsterdam, the Netherlands,Chengdu Development Centre for Science and Technology, Shuangliu, Chengdu, Sichuan 610207, People's Republic of China;
FOM institute DIFFER, Association EURATOM-FOM, Trilateral Euregio Cluster, NL-3439 MN Nieuwegein, the Netherlands;
deuterium retention; surface modifications; radiation damage;
机译:高通量氘等离子体暴露的钨和钨钽合金的表面改性及其对氘保留的影响
机译:氘离子暴露后五种等级钨的氘保留和表面形态改变
机译:暴露于高通量氘等离子体中的钨和钨钽合金中的氘保留
机译:钨和钼暴露于低能量,高通量氘质等离子体的表面改性和氘保留
机译:氘化在面向锂的石墨等离子表面中的基本机理。
机译:阴离子的离子迁移谱-氢氘交换质谱法:第3部分。通过氘的吸收估算表面积
机译:暴露于高通量氘血浆的钨和钨钽合金的表面改性及其对氘保留的影响