Spin Injection and Spin Transport in a Ferromagnet―Semiconductor Junction: Microwave Emission and Absorption

摘要

Current-induced microwave emission and absorption in ferromagnet―semiconductor (n-InSb) junctions in centimeter, millimeter, and submillimeter spectral ranges are investigated. The results obtained are explained by injection of polarized change carriers from a magnetic semiconductor to the lower or upper Zee-man levels of free carriers in semiconductor leading to nonequilibrium population of these levels. Based on the analysis of indirect experimental data, it can be expected that lasing is possible for all types of emitting contacts.