Injection energy dependence of spin-polarized hot-electron transport through a ferromagnetic metal/oxide/semiconductor junction

N. Rougemaille; D. Lamine; G. Lampel; Y. Lassailly; J. Peretti

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Injection energy dependence of spin-polarized hot-electron transport through a ferromagnetic metal/oxide/semiconductor junction

机译：自旋极化热电子通过铁磁金属/氧化物/半导体结的注入能量依赖性

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Spin-polarized hot electron transport through a ferromagnetic metal/oxide/semiconductor junction is studied as a function of the electron injection energy in the range from a few eV up to 1 keV. The incident spin-polarized electrons are produced by a GaAs

机译：研究了通过铁磁金属/氧化物/半导体结的自旋极化热电子传输，其范围是几eV至1 keV范围内电子注入能量的函数。入射自旋极化电子由GaAs产生

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《Physical review》 |2008年第9期|581-594|共14页
作者
N. Rougemaille; D. Lamine; G. Lampel; Y. Lassailly; J. Peretti;
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正文语种 eng
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spin polarized transport; metal-insulator-semiconductor structures (including semiconductor-to-insulator); electron impact: secondary emission; magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields;

机译：自旋极化传输;金属-绝缘体-半导体结构（包括半导体到绝缘体）;电子冲击：二次发射;磁电子学自旋电子学：利用自旋极化传输或集成磁场的设备;

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专利

1. Bias dependence in spin-polarized tunneling of ferromagnet/ferromagnetic insulator (semiconductor)/ferromagnet junctions [J] . Li Yun, Li Bozang, Dai Daosheng Communications in Theoretical Physics . 1999,第2期

机译：铁磁体/铁磁绝缘体（半导体）/铁磁体结的自旋极化隧穿中的偏置相关性
2. Biao Dependence in Spin-Polarized Tunneing of Ferromagnet/Ferromagnetic Insulator (Semiconductor)/Ferromagnet Junctions [J] . LI Yun, LI Bozang, DAI Daosheng Communications in Theoretical Physics . 1999,第2期

机译：铁磁体/铁磁绝缘体（半导体）/铁磁体结的自旋极化调谐中的标依赖性
3. Andreev reflection and incoherent spin-polarized transport in ferromagnetic semiconductor/d-wave superconductor/ferromagnetic semiconductor tunnel junctions with {110} interfaces [J] . Y. C. Tao, H. Liu, J. G. Hu Journal of Applied Physics . 2010,第9pta1期

机译：具有{110}接口的铁磁半导体/ d波超导体/铁磁半导体隧道结中的Andreev反射和非相干自旋极化传输
4. SPIN-POLARIZED CARRIER INJECTION EFFECT IN FERROMAGNETIC SEMICONDUCTOR/DIFFUSIVE SEMICONDUCTOR/SUPERCONDUCTOR JUNCTIONS [C] . H. TAKAYANAGI, T. AKAZAKI, N. NISHIZAWA, International Symposium on Foundations of Quantum Mechanics in the Light of New Technology . 2009

机译：铁磁半导体/扩散半导体/超导结中的旋转偏振载流程效果
5. Ballistic electron magnetic microscopy: Hot-electron transport studies and magnetic imaging of ferromagnetic multilayer films, nanostructures, and tunnel junctions. [D] . Rippard, William Horrocks. 2001

机译：弹道电子显微镜：铁磁多层膜，纳米结构和隧道结的热电子传输研究和磁成像。
6. Strong and highly asymmetrical optical absorption in conformal metal-semiconductor-metal grating system for plasmonic hot-electron photodetection application [O] . Kai Wu, Yaohui Zhan, Cheng Zhang, -1

机译：在等离子热电子光电检测应用中的共形金属-半导体-金属光栅系统中的强且高度不对称的光吸收
7. Theory of spin-polarized transport in photoexcited semiconductor/ferromagnet tunnel junctions [O] . Jansen, R, Prins, MWJ Menno, Kempen, van, H 1998

机译：光激发半导体/铁磁体隧道结中的自旋极化输运理论
8. Spin-Polarized Tunneling at Interfaces Between Oxides and Metals or Semiconductors. [R] . Strand, D. J. 2006

机译：氧化物与金属或半导体界面的自旋极化隧道。

Injection energy dependence of spin-polarized hot-electron transport through a ferromagnetic metal/oxide/semiconductor junction

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