Bias dependence in spin-polarized tunneling of ferromagnet/ferromagnetic insulator (semiconductor)/ferromagnet junctions

摘要

Based on the nearly-free-electron approximation, the bias dependencies of elec- tron transport properties of ferromagnet/ferromagnetic insulator(semiconductor)/ferromagnet junctions have been studied. Resonances appear in electron transmission probability. These resonances cause oscillations in the zero-temperature tunnel current and the resonance occur in tunnel conductance. Tunnel magnetoresistance(TMR)is an oscillatory function of bias. The TMR can reach a value as high as 10/100. The bias dependencies of electron transport Properties relate to the magnetic configurations of the junctions.