Facet formation of nitride semiconductors

摘要

GaN hexagonal microprisms (HMPs) with smooth vertical facets were successfully fabricated by selec- tive area metalorganic vapor phase epitaxy (SA-MOVPE). Lasing was observed from the GaN HMPs when they were photo-pumped at room temperature. The lasing had an inscribed hexagonal optical apth. The vertical facets fabricated by SA-MOVPE are suitable as laser mirrors, because they have very smooth and damage-free surfaces, and are perfectly vertical to the substrates. The selectively grown GaN has a smooth top-surface with atomic steps and wide terraces. These steps originate from the spiral growth.