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Emulation of spike-timing dependent plasticity in nano-scale phase change memory

机译:在纳米级相变存储器中模拟与尖峰时序相关的可塑性

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The spike-timing dependent plasticity (STDP) of biological synapses, which is known to be a function of the formulated Hebbian learning rule of human cognition, learning and memory abilities, was emulated with two-phase change memory (2-PCM) cells built with 39 nm technology. For this, we designed a novel time-modulated voltage (TMV) scheme for changing the conductance of 2-PCM cells, that could produce both long-term potentiation (LTP) and long-term depression (LTD) by applying variable (decreasing/increasing) pulse voltages according to the sign and magnitude in time interval between pre- and post-spikes. Since such schemes can be easily modified to have a variety of pulse shapes and time intervals between pulses, it is expected to be a proper scheme for designing diverse synaptic connection abilities. In addition, the small form factor and low energy consumption of 2-PCM make them comparable to biological synapses, which makes phase change memory a promising candidate for electronic synapses in large-scale neuromorphic system applications. (C) 2015 The Authors. Published by Elsevier B.V.
机译:用建立的两相变化记忆(2-PCM)细胞模拟了生物突触的与穗定时相关的可塑性(STDP),已知该功能与人类认知,学习和记忆能力的拟定Hebbian学习规则有关采用39纳米技术。为此,我们设计了一种新颖的时间调制电压(TMV)方案来更改2-PCM电池的电导率,该方案可以通过应用变量(降低/降低电压来产生长期增强(LTP)和长期降低(LTD)根据尖峰前和尖峰后时间间隔内的符号和幅度来增加脉冲电压。由于可以容易地将这样的方案修改为具有各种脉冲形状和脉冲之间的时间间隔,因此期望它是用于设计各种突触连接能力的合适方案。此外,2-PCM的小外形尺寸和低能耗使其可与生物突触相媲美,这使相变存储器成为大规模神经形态系统应用中电子突触的有希望的候选者。 (C)2015作者。由Elsevier B.V.发布

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