Oxide-Assisted Semiconductor Nanowire Growth

摘要

A new method based on oxide- assisted growth has been developed that is capable of producing a bulk quantity of various semiconductor nanowires including Si and Ge. The presence of ox- ides in the target is a common and essen- tial ingredient for the synthesis when using laser ablation or thermal evapora- tion techniques, in order that the targets are capable of generating semiconductor oxides in the vapor phase.