Semiconductor on which nanowires form in crystals by crystal growth and crystal growth method of nanowires

摘要

PURPOSE: A nano wire crystal grown semiconductor substrate and a crystal growth process of a nano wire are provided to be capable of preventing inner defect from being prevailed from a semiconductor substrate to the nano wire and carrying out an epitaxial growth process for forming the nano wire by using the upper and lower buffer layer deposited between the nano wire and the semiconductor substrate. CONSTITUTION: The first buffer layer(40) is deposited at the upper portion of a semiconductor substrate(10). The second buffer layer(50) is deposited on the first buffer layer. Then, nano size catalysts(20) are deposited at the upper portion of the second buffer layer. A crystal growth process is carried out at the upper portion of the resultant structure by using gallium and reaction gas for forming a nano wire(30), wherein the nano wire has the same lattice constant as the second buffer layer.