Devices Drive Power From GaN Sources

摘要

Solid-State Power transistors continue to gain on vacuum tubes, as device manufacturers explore the capabilities of newer materials, such as gallium nitride (GaN). At this year's IEEE International Microwave Symposium (IMS) in Montreal, Canada, for example, Toshiba America Electronic Components shows impressive GaN progress in both discrete-device and monolithic forms, with a power transistor for Kaband satellite communications (satcom) use and an X-band monolithic-microwave-integrated-circuit (MMIC) amplifier for radar applications, respectively.