Differential low-loss T/R switch for phase array application in 0.18-μm CMOS technology

摘要

Here, a Ku-band transmit/receive (T/R) differential switch using the 180-nm CMOS process is presented. The differential structure method is chosen to realise easy integration with other RF components. From 15-18 GHz, the measured insertion loss (IL) of the switch in the transmit (TX) and receive (RX) mode is 4.3 and 4.1 dB, respectively. The isolation is better than 20 dB in both modes. The design achieves a measured input 1 dB power compression point (${m I}{m P}_1{m dB}$IP1dB) of 13.5 dBm at 17 GHz. The differential T/R switch integrated in a Ku-band-phased array transceiver demonstrates that it is a promising technology for implementing fully integrated transceiver.