首页> 外文期刊>IEEE Transactions on Microwave Theory and Techniques >A $Q$ -Band Four-Element Phased-Array Front-End Receiver With Integrated Wilkinson Power Combiners in 0.18-$mu{{hbox{m}}}$ SiGe BiCMOS Technology
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A $Q$ -Band Four-Element Phased-Array Front-End Receiver With Integrated Wilkinson Power Combiners in 0.18-$mu{{hbox{m}}}$ SiGe BiCMOS Technology

机译:具有0.18- $ mu {{hbox {m}}} $ SiGe BiCMOS技术的集成了Wilkinson功率合成器的$ Q $频段四元件相控阵前端接收器

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摘要

A four-element phased-array front-end receiver based on 4-bit RF phase shifters is demonstrated in a standard 0.18-mum SiGe BiCMOS technology for Q-band (30-50 GHz) satellite communications and radar applications. The phased-array receiver uses a corporate-feed approach with on-chip Wilkinson power combiners, and shows a power gain of 10.4 dB with an IIP3 of -13.8 dBm per element at 38.5 GHz and a 3-dB gain bandwidth of 32.8-44 GHz. The rms gain and phase errors are les1.2 dB and les8.7deg for all 4-bit phase states at 30-50 GHz. The beamformer also results in les0.4 dB of rms gain mismatch and les2deg of rms phase mismatch between the four channels. The channel-to-channel isolation is better than -35 dB at 30-50 GHz. The chip consumes 118 mA from a 5-V supply voltage and overall chip size is 1.4times1.7 mm2 including all pads and CMOS control electronics.
机译:在用于Q波段(30-50 GHz)卫星通信和雷达应用的标准0.18微米SiGe BiCMOS技术中,演示了基于4位RF移相器的四元素相控阵前端接收机。相控阵接收器采用带片上Wilkinson功率组合器的公司馈电方法,在38.5 GHz频率下每个元件的IIP3值为-13.8 dBm,功率增益为10.4 dB,3dB-32.8-44的增益带宽为32.8-44 GHz。在30-50 GHz时,所有4位相位状态的均方根增益和相位误差均为les1.2 dB和les8.7deg。波束形成器还会导致四个通道之间的均方根增益失配为les0.4 dB,均方根相位失配为les2deg。在30-50 GHz时,通道间隔离度优于-35 dB。该芯片在5 V电源电压下消耗118 mA电流,包括所有焊盘和CMOS控制电子器件在内,整个芯片的尺寸为1.4 x 1.7 mm2。

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