330 W LDMOS Power Transistor for L-band Radar Applications

摘要

The intense pressure on wireless service providers to reduce cost at every level while maintaining or even increasing performance has produced some notable achievements. One of the most impressive is in LDMOS RF power transistors, which today deliver higher RF power, gain and efficiency than their predecessors. Although perhaps less obvious than the highly visible wireless applications, radar systems used for air traffic control, surveillance and weather monitoring benefit just as much from these advances because they employ large numbers of RF power transistors to produce extremely high output levels. The 50 Volt MRF6V14300H LDMOS FET from Freescale Semiconductor further extends LDMOS device performance by producing 330 W at L-band frequencies between 1200 and 1400 MHz, with 60 percent drain efficiency and 17 dB of gain, which are the best figures of merit to date from a single device at these frequencies.