A 5000 h RF life test on 330 W RF-LDMOS transistors for radars applications

摘要

A reliability test bench dedicated to RF power devices is used to improve 330 W LDMOS in a radar conditions. The monitoring of RF power, drain, gate voltages and currents under various pulses and temperatures conditions are investigated. Numerous duty cycles are applied in order to stress LDMOS. It shows with tracking all this parameters that only few hot carrier injection phenomenon appear with no incidence on RF figures of merit (P_(out) or PAE). Robustness and ruggedness are shown for LDMOS with this bench for radar applications in L-band.