A workbench development for L-band LDMOS amplifier reliability study (electronic power transistors reliabilty for radar applications)

摘要

This paper describes the conception and making of an ageing workbench for power microwave transistors. This bench has the particularity to address high power components reaching one KW pulse operating, over the L-band with in-situ electrical measurements process. Considering three kinds of stresses, we present results regarding the performance and reversible damage of a commercial silicon transistor technology for radar applications.