首页> 外文期刊>Microwave and Wireless Components Letters, IEEE >A Low-Power Broadband 200 GHz Down-Conversion Mixer with Integrated LO-Driver in 0.13 src='/images/tex/241.gif' alt='mu'> m SiGe BiCMOS
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A Low-Power Broadband 200 GHz Down-Conversion Mixer with Integrated LO-Driver in 0.13 src='/images/tex/241.gif' alt='mu'> m SiGe BiCMOS

机译:具有0.13的集成LO驱动器的低功率宽带200 GHz下变频混频器 src =“ / images / tex / 241.gif” alt =“ mu”> 硅锗BiCMOS

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This letter presents an active 200 GHz fundamental down-conversion mixer based on the Micromixer topology for low-power high data-rate wireless communications. The mixer-core operation requires a 5 dBm LO-signal, which is generated on-chip from an external single-ended source of only 20 dBm by means of a power-efficient LO-driver and a passive balun. Mixer, LO-driver and balun have been implemented together in a 450 GHz SiGe BiCMOS technology occupying a circuit core area of 0.21 mm. For a 200 GHz LO-signal, the characterized circuit exhibits a maximum conversion gain of 5.5 dB over a 3 dB RF-bandwidth of 30 GHz, requiring only 17.4 and 22.5 mW of DC-power in the mixer core and in the LO-driver, respectively.
机译:这封信提出了一种基于Micromixer拓扑的有源200 GHz基本下变频混频器,用于低功率高数据速率无线通信。混频器内核的工作需要5 dBm的LO信号,该信号是通过高效节能的LO驱动器和无源巴伦从仅20 dBm的外部单端源在芯片上生成的。混频器,LO驱动器和巴伦已在450 GHz SiGe BiCMOS技术中一起实现,占据了0.21 mm的电路核心面积。对于200 GHz的LO信号,该特性电路在30 GHz的3 dB RF带宽上表现出5.5 dB的最大转换增益,在混频器内核和LO驱动器中仅需要17.4和22.5 mW的直流电源, 分别。

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