Wafer-level multilayer integration of RF passives with thick BCB/metal interlayer connection in silicon-based SiP

摘要

This paper presents an integration technology for RF passives using benzocyclobutene (BCB)/metal multilayer interconnection for system-in-package applications. This technology has been specially developed for RF subsystem packages in which a thick polymer, BCB (more than 15 μm thick), is adopted as dielectric with lossy silicon as substrate for its excellent characteristics. Both dry-etch BCB and photosensitive BCB are applied in this work, and their processes are briefly introduced and compared. An RF power divider, an MIM capacitor, different types of RF inductors as well as a coupled microstrip based band-pass filter are fabricated and measured at wafer level. The results show good electrical performances, and accordingly the passives are well applicable in RF band. Moreover, the subsystem models including monolithic chips connected with passives are presented.