Effects of hot carrier stress on the RF performance in SOI MOSFETs

摘要

This paper presents new experimental results on the DC hot carrier stress effects on the RF performance of SOI MOSFETs. The RF performance degradation in terms of cut-off frequency, minimum noise figure, and RF power has been measured and analyzed. The reduction of transconductance is turned out to be one of the major causes of the RF performance degradation. The measurement also shows that the RF performance degradation is more significant than the DC performance degradation. Especially, the degradation of minimum noise figure is the most significant.