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Trends of power semiconductor wafer level packaging

机译:功率半导体晶圆级封装的趋势

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摘要

A review of recent advances in power wafer level electronic packaging is presented based on the development of power device integration. The paper covers in more detail how advances in both semiconductor content and power advanced wafer level package design and materials have co-enabled significant advances in power device capability during recent years. Extrapolating the same trends in representative areas for the remainder of the decade serves to highlight where further improvement in materials and techniques can drive continued enhancements in usability, efficiency, reliability and overall cost of power semiconductor solutions. Along with next generation wafer level power packaging development, the role of modeling is a key to assure successful package design. An overview of the power package modeling is presented. Challenges of wafer level power semiconductor packaging and modeling in both next generation design and assembly processes are presented and discussed.
机译:基于功率器件集成的发展,介绍了功率晶片级电子封装的最新进展。本文更详细地介绍了半导体含量和功率先进晶圆级封装设计和材料的进步如何共同推动了近年来功率器件能力的重大进步。在过去十年的剩余时间里,在代表性领域中推论相同的趋势可以突出显示材料和技术的进一步改进可以推动功率半导体解决方案的可用性,效率,可靠性和总体成本的不断提高。随着下一代晶圆级功率封装的发展,建模的作用是确保封装设计成功的关键。给出了电源封装建模的概述。提出并讨论了下一代设计和组装工艺中晶圆级功率半导体封装和建模的挑战。

著录项

  • 来源
    《Microelectronics reliability》 |2010年第4期|p.514-521|共8页
  • 作者

    Yong Liu;

  • 作者单位

    Fairchild Semiconductor Corp., South Portland, ME 04074, United States;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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