Modelling of ht etemperature and electric field dependence of substrate/gate current SILC with an elastic resonant trap assisted tunnelling mechanism

摘要

The understanding of the transport mechanism at the origin of the leakage currents in thin oxides is crucial to make reliable data retention proedictions. In this work we demonstrate that eleastic resonant trap assisted tunnelling well describes the SILC (Stress Induced Leakage Curent) for oxide thicknesses between 4 and 7.5nm when an appropriate trap profile is used. Moreover our approach gives a qualitative description of th etemperature dependence of the SILC, exhibiting similar field dependent activation energy. Finally we showed that the SILC measured in th esubstrate current could also be modeled using a trap assisted tunnelling model, demonstrating that this approach is consistent with the main experimental characteristics of the SILC.