A comparative study on a high aspect ratio contact hole etching in UFC- and PFC-containing plasmas

摘要

An etching of a SiO_2 contact hole with a diameter of 0.19 μm and an aspect ratio of 13, using C_4F_6/Ar/O_2/CH_2F_2 and c-C_4F_8/ Ar/O_2/CH_2F_2 plasmas, was performed for a feasibility test of the use of unsaturated fluorocarbons (UFCs) as an alternative to perfluorocarbon (PFC) gases for a high aspect ratio contact hole etching. The etch profile of the contact hole obtained in the C_4F_6/Ar/O_2/CH_2F_2 plasma was shown to have 23% lower degree of bowing than that in the c-C_4F_8/Ar/O_2/CH_2F_2 plasma. The Kelvin and chain contact resistances of the contact holes etched in the C_4F_6/Ar/O_2/CH_2F_2 plasma were 10-12% higher than those in the c-C_4F_8/ Ar/O_2/CH_2F_2 plasma, but they were within the device spec. The integration of device with 0.1 μm design rule using C_4F_6/Ar/O_2/CH_2F_2 and c-C_4F_8/Ar/O_2/CH_2F_2 plasmas during the contact hole etching was also conducted, and it was found that etch profiles, metal coverage, and bottom critical dimensions of the contact in the C_4F_6/Ar/O_2/CH_2F_2 plasma were nearly identical to those in the c-C_4F_8/ Ar/O_2/CH_2F_2 plasma, suggesting that the use of C_4F_6 gas as an etchant gas for a high aspect ratio contact hole etching can be a good alternative to PFC gases.