METHOD OF FORMING METAL CONTACT OF SEMICONDUCTOR DEVICE USING SURFACE WAVE PLASMA(SWP) TO PREVENT ETCHING FROM BEING STOPPED DUE TO HIGH ASPECT RATIO AND REDUCE UNIFORMLY METAL CONTACT RESISTANCE

摘要

Purpose: a kind of method for the metallic contact being used to form semiconductor device is arranged to prevent etching to be stopped due to a high aspect ratio and equably reduces metal contact resistance enhancing ion bombardment and straight, uses the SWP (surface wave plasma) helped by foreign minister's impulse modulation. Construction: a barrier layer (33) are formed in semi-conductive substrate, have a metal wire (31). One oxide layer (35) is formed in barrier layer. One photoresist mode (37) is formed in oxide layer. Oxide layer and barrier layer are patterned by using the sources SWP helped by foreign minister's impulse modulation.