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Waveguide mechanism and design of thermal contact resistance at metal rheologic interface

机译:金属流变界面的波导机理及热接触电阻设计

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摘要

The main factors and their varied disciplines affecting the heat transfer at the metal rheologic interface were studied from the waveguide mechanism of heat transfer of electrons and phonons, guiding the design of thermal contact resistance through studying the microscale mechanism of heat transfer at the interface. The results show that electron has stronger quantum tunneling effect when the thickness of oxide film is smaller than de Broglie wavelength of electron and the heat conduction of oxide film produces microscale effect. The thickness and nature of oxide film dominate the heat transfer at the metal rheologic interface. The main means to design the interface contact conductance are to control the formation of oxide film as well as the process of machining of roller surface and lubrication of interface.
机译:从电子和声子的传热的波导机制研究了影响金属流变界面的传热的主要因素及其变化的学科,通过研究界面的传热微观机制,引导热接触电阻的设计。结果表明,当氧化膜的厚度小于电子的厚度小于电子的厚度和氧化膜的热传导产生微观效应时,电子具有较强的量子隧穿效果。氧化物膜的厚度和性质在金属流变界面处的传热定位。设计界面接触电导的主要手段是控制氧化膜的形成以及辊表面的加工过程和界面的润滑。

著录项

  • 来源
    《中国有色金属学报(英文版)》 |2003年第003期|579-584|共6页
  • 作者单位

    College of Mechanical and Electrical Engineering, Central South University, Changsha 410083, China;

    College of Mechanical and Electrical Engineering, Central South University, Changsha 410083, China;

    College of Mechanical and Electrical Engineering, Central South University, Changsha 410083, China;

    College of Mechanical and Electrical Engineering, Central South University, Changsha 410083, China;

  • 收录信息 中国科学引文数据库(CSCD);中国科技论文与引文数据库(CSTPCD);
  • 原文格式 PDF
  • 正文语种 chi
  • 中图分类 传热学;
  • 关键词

    free electron; phonon; rheologic interface; thermal contact resistance; oxide film;

    机译:自由电子声子流变界面热接触电阻氧化膜;
  • 入库时间 2022-08-19 03:34:33
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