Characteristics of β-SiC/Si heterojunction with a SiGe buffer film

摘要

In the present work, preparation of SiGe thin buffer film was performed on β-Si single crystals, non-doped β-SiC epitaxial layer was grown on SiGe/Si substrate by means of lower pressure chemical vapor deposition (LPCVD) and ohmic contacts were formed to fabricate typical multilayer sandwich structure of Al/β-SiC/SiGe/P-Si/Al heterojunction. Contrasted β-SiC/SiGe/P-Si heterojunction with β-SiC/P-Si, scanning electron microscope (SEM) images, reverse breakdown voltage, I-V and C-V characteristics are studied. Theory and experimental results show that introduction of SiGe buffer layer can improve interface properties of heterojunction, reverse breakdown voltage and rectification ratio (RR) of the heterojunction.