首页> 外文期刊>Microelectronics journal >Memristor-CNTFET based ternary logic gates
【24h】

Memristor-CNTFET based ternary logic gates

机译:基于忆阻器-CNTFET的三态逻辑门

获取原文
获取原文并翻译 | 示例

摘要

Multilevel electronic systems offer the reduction of implementation' complexity, power consumption, and area. Ternary system is a very promising system where more information is represented in the same number of digits compared to the binary systems. In this paper, ternary logic gates and some of their ternary circuit applications are presented using memristors and CNTFET inverter. This integration between memristors and CNTFET offers low static power, small area and high performance. The proposed circuits do not require refreshment like the previously published circuits and are not initial state dependent because the memristors switch between the low resistance and high resistance states according to each input. In addition, we investigate the mathematical analysis of the proposed memristor ternary logic gates circuits. In the circuit simulations, a VTEAM model is used to verify the proposed circuits. Finally, a comparison between the proposed circuits with the previously published implementations is discussed showing better performance in terms of power, delay and area.
机译:多层电子系统可降低实现的复杂性,功耗和面积。三元系统是一个非常有前途的系统,与二元系统相比,三元系统用相同数量的数字表示更多信息。本文介绍了使用忆阻器和CNTFET反相器的三态逻辑门及其三态电路应用。忆阻器和CNTFET之间的这种集成提供了低静态功耗,小面积和高性能。所提出的电路不需要像先前公开的电路那样的刷新,并且不依赖于初始状态,因为忆阻器根据每个输入在低电阻状态和高电阻状态之间切换。此外,我们研究了所提出的忆阻器三元逻辑门电路的数学分析。在电路仿真中,使用VTEAM模型来验证所提出的电路。最后,讨论了所建议的电路与先前发布的实现方式之间的比较,显示了在功率,延迟和面积方面更好的性能。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号