Defect transformation under growth of submonolayer oxides on silicon surfaces at low temperatures

摘要

The defect transformation under growth of submonomlayer oxides on silicon surfaces is studied in situ on reconstructed Si(100)-2×1 and Si(111)-7×7 surfaces and on hydrogenated Si surfaces of Si nanocrystallites. The methods of the Quenching of the photoluminescence of bulk c-Si due to surface recombination and of the infrared free carriers absorption in Mesoporous Si are sued. It is shown that dangling bonds at Si-Si dimers are not recombination active.