Use of the 'mist' (liquid-source) deposition system to produce new high-dielectric devices: ferroelectric-filled photonic crystals and Hf-oxide and related buffer layers for ferroelectric-gate FETs

摘要

We describe the application of misted chemical solution deposition (CSD) techniques to processing of ferroelectric-filled porous silicon photonic devices and of novel precursor medium- and high-dielectric constant films for gate oxide and memory applications.