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Long-retention ferroelectric-gate FET with a (HfO/sub 2/)/sub x/(Al/sub 2/O/sub 3/)/sub 1-x/ buffer-insulating layer for 1T FeRAM

机译：具有（HfO / sub 2 /）/ sub x /（Al / sub 2 / O / sub 3 /）/ sub 1-x /缓冲绝缘层的长保留铁电栅极FET，用于1T FeRAM

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A ferroelectric-gate FET (FeFET) is significant for 1T FeRAM. Among fabricated Pt/SrBi/sub 2/Ta/sub 2/O/sub 9//(HfO/sub 2/)/sub x/(Al/sub 2/O/sub 3/)/sub 1-x//Si FeFETs, we find that the optimum buffer-layer composition ratio, x, of HfO/sub 2/ and Al/sub 2/O/sub 3/ exists around 0.75. A FeFET of x = 0.75 with high k buffer layer and low leakage current shows long data retention.

机译：铁电栅极FET（FeFET）对于1T FeRAM具有重要意义。在制造的Pt / SrBi / sub 2 / Ta / sub 2 / O / sub 9 //（HfO / sub 2 /）/ sub x /（Al / sub 2 / O / sub 3 /）/ sub 1-x //中在Si FeFET中，我们发现HfO / sub 2 /和Al / sub 2 / O / sub 3 /的最佳缓冲层组成比x约为0.75。具有高k缓冲层和低泄漏电流的x = 0.75的FeFET显示了长时间的数据保留。

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《》|2005年|p.915-918|共4页
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Sakai; S.; Takahashi; M.; Ilangovan; R.;
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中图分类无线电电子学、电信技术;
关键词
platinum; strontium compounds; bismuth compounds; tantalum compounds; hafnium compounds; aluminium compounds; silicon; ferroelectric storage; random-access storage; MOSFET; leakage currents; buffer-insulating layer; ferroelectric-gate FET; FeRAM; Pt/SrBi/sub 2/Ta/sub 2/O/sub 9//(HfO/sub 2/)/sub x/(Al/sub 2/O/sub 3/)/sub 1-x//Si; buffer-layer composition ratio; leakage current; data retention; Pt-SrBi/sub 2/Ta/sub 2/O/sub 9/-HfO/sub 2/Al/sub 2/O/sub 3/-Si;

机译：铂;锶化合物;铋化合物;钽化合物; f化合物;铝化合物;硅;铁电存储;随机存取存储; MOSFET;漏电流;缓冲绝缘层;铁电栅极FET; FeRAM; Pt / SrBi / sub 2 / Ta / sub 2 / O / sub 9 //（HfO / sub 2 /）/ sub x /（Al / sub 2 / O / sub 3 /）/ sub 1-x // Si;缓冲层组成比;泄漏电流;数据保留; Pt-SrBi / sub 2 / Ta / sub 2 / O / sub 9 / -HfO / sub 2 / Al / sub 2 / O / sub 3 / -Si;

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专利

1. Deposition of 60 nm thin Sr_(0.8)Bi_(2.2)Ta_2O_9 layers for application in scaled 1T1C and 1T FeRAM devices [J] . L. Goux, Z. Xu, B. Kaczer, Microelectronic Engineering . 2005,第Jun期

机译：沉积60 nm薄Sr_（0.8）Bi_（2.2）Ta_2O_9层，用于规模化的1T1C和1T FeRAM器件
2. Thirty-Day-Long Data Retention in Ferroelectric-Gate Field-Effect Transistors with HfO_2 Buffer Layers [J] . Kazuhiro Takahashi, Koji Aizawa, Byung-Eun Park, Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2005,第8期

机译：具有HfO_2缓冲层的铁电门极场效应晶体管中的30天长时间数据保留
3. Impact of HfO2 buffer layers on data retention characteristics of ferroelectric-gate field-effect transistors [J] . Aizawa K, Park BE, Kawashima Y, Applied Physics Letters . 2004,第15期

机译：HfO2缓冲层对铁电栅场效应晶体管数据保留特性的影响
4. Long-retention ferroelectric-gate FET with a (HfO₂)_x(Al₂O₃)_1-x buffer-insulating layer for 1T FeRAM [C] . Sakai S., Takahashi M., Ilangovan R. Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International . -1

机译：具有（HfO _{2 ）_{x （Al _{2 O _{3 ） 1-x 缓冲绝缘层}}}}
5. Fabrication of Al:HfO2 Gate Dielectric MOSFETs [D] . McMurdy, George . 2019

机译：AL的制造：HFO2栅极电介质MOSFET
6. Remarkable electronic and optical anisotropy of layered 1T’-WTe2 2D materials [O] . Qiankun Zhang, Rongjie Zhang, Jiancui Chen, 2019

机译：1T’-WTe2 2D分层材料的显着电子和光学各向异性
7. HfO2/TiO2/HfO2 tri-layer high-K gate oxide based MoS2 negative capacitance FET with steep subthreshold swing [O] . Md. Sherajul Islam, Shahrukh Sadman, A. S. M. Jannatul Islam, 2020

机译：HFO2 / TiO2 / HFO2三层高k基于氧化物的MOS2负电容FET，具有陡峭的亚阈值摆幅

Long-retention ferroelectric-gate FET with a (HfO/sub 2/)/sub x/(Al/sub 2/O/sub 3/)/sub 1-x/ buffer-insulating layer for 1T FeRAM

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