Long-retention ferroelectric-gate FET with a (HfO₂)_x(Al₂O₃)_1-x buffer-insulating layer for 1T FeRAM

摘要

A ferroelectric-gate FET (FeFET) is significant for 1T FeRAM. Among fabricated Pt/SrBi₂Ta₂O₉/(HfO₂)_x(Al₂O₃)_1-x/Si FeFETs, we find that the optimum buffer-layer composition ratio, x, of HfO₂ and Al₂O₃ exists around 0.75. A FeFET of x = 0.75 with high k buffer layer and low leakage current shows long data retention.