The stitching error dependence of the resist pattern accuracy for electron beam projection lithography

摘要

The stitching error dependence of the resist pattern accuracy for electron beam projection lithography is presented. The terrace pair is employed to divide the pattern in order to control the uniformity of critical dimension (CD) within large stitching margin. The model of electron scatting is supposed in the simulation. The results show that the CD and pattern displacement are within budget if the overlapping and transverse shifting of pattern are controlled within +-20 and +-30 nm, respectively, for 100 nm node generation.