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Electrochemical corrosion effects and chemical mechanical polishing characteristics of tungsten film using mixed oxidizers

机译:混合氧化剂对钨膜的电化学腐蚀作用和化学机械抛光特性

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摘要

In this paper, the effects of mixed oxidizers on tungsten-chemical mechanical polishing (W-CMP) process were studied using three different kinds of oxidizers such as Fe(NO_3)_3, KIO_3 and H_2O_2. Moreover, the interaction between the tungsten film and the oxidizer was discussed by potentiodynamic polarization test, in order to compare the CMP performances and electrochemical behavior of the tungsten film as a function of mixed oxidizers. The potentiodynamic polarization results indicated that the corrosion current densities of the 5 wt% H_2O_2 and 5 wt% H_2O_2 + 5 wt% Fe(NO_3)_3 were higher than the other mixed oxidizers. Such an electrochemical corrosion effect implies that slurries with the highest removal rate have a high dissolution rate at lower pH. Therefore, we conclude that W-CMP performances are strongly dependent on the kind of oxidizers and the amounts of oxidizer additive.
机译:在本文中,研究了使用三种不同类型的氧化剂,如Fe(NO_3)_3,KIO_3和H_2O_2,对混合氧化剂对钨化学机械抛光(W-CMP)工艺的影响。此外,通过电位动力学极化测试讨论了钨膜与氧化剂之间的相互作用,以比较钨膜的CMP性能和电化学行为随混合氧化剂的变化。电位动力学极化结果表明,5 wt%H_2O_2和5 wt%H_2O_2 + 5 wt%Fe(NO_3)_3的腐蚀电流密度高于其他混合氧化剂。这种电化学腐蚀作用表明,具有最高去除速率的浆料在较低的pH值下具有较高的溶解速率。因此,我们得出结论,W-CMP性能在很大程度上取决于氧化剂的种类和氧化剂添加剂的量。

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