High growth rate process in a SiC horizontal CVD reactor using HCl

摘要

The results of a new epitaxial process using an industrial 6 x 2" wafer reactor with the introduction of HC1 during the growth have been reported. A complete reduction of silicon nucleation in the gas phase has been observed even for high silicon dilution parameters (Si/H_2 > 0.05%) and an increase of the growth rate until about 20 μm/h has been measured. Photoluminescence at room temperature and at 50 K was used for defects quantification and distribution. On these wafers grown using HCl high voltage Schottky diodes have been realized. The diodes were analyzed by current-voltage (Ⅰ-Ⅴ) characteristics.