Improved reliability of Ge MOS capacitor with HfTiON high- k dielelctric by using Ge surface pretreatment in wet NO

摘要

High-quality Ge MOS capacitors with HfTiON as high-k gate dielectric are fabricated by using Ge surface pretreatment in wet NH_3, N_2O, NO and N_2 ambients. The wet-NO pretreatment is found to be the best for improving the reliability properties of the Ge MOS capacitor, with smallest increases of interface-state density, leakage current and flat-band voltage after electrical stress.