Improved Electrical Properties Of Hftio/geo_xn_y Gate Dielectric Ge Mos Capacitors By Using Wet-no Ge-surface Pretreatment

摘要

Reactive cosputtering is employed to prepare high-permittivity HfTiO gate dielectric on n-Ge substrate. Effects of Ge-surface pretreatment on the interface and gate leakage properties of the dielectric are investigated. Excellent performances of Al/HfTiO/GeO_xN_y-Ge MOS capacitor with wet-NO surface pretreatment have been achieved with a interface-state density of 2.1 × 10~(11) eV~(-1) cm~(-2), equivalent oxide charge of -7.67 × 10~(11) cm~(-2) and gate leakage current density of 4.97 × 10~(-5) A/cm~2 at V_g = 1 V.