The physical properties of (bottom)Si/SiO_2/Ti(top) and (bottom)Si/SiO_2/Ti/TiN/Al(0.5 wt.% Cu)(top) structures by different processes were compared and studied. The resistivities of thin Ti films and the reflectivities of thin Al alloy films were found to correlate to their microstructure as well as the mean time to fail (MTTF) in electromigration (EM) testing. A method to predict and monitor the EM performance of the AlCu interconnects was proposed.
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机译：比较和研究了（底部）Si / SiO_2 / Ti（顶部）和（底部）Si / SiO_2 / Ti / TiN / Al（0.5 wt。％Cu）（顶部）结构的物理性能。发现钛薄膜的电阻率和铝合金薄膜的反射率与其微观结构以及电迁移（EM）测试中的平均失效时间（MTTF）相关。提出了一种预测和监视AlCu互连的EM性能的方法。
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