An analytical method to predict electromigration-induced finger-shaped void growth in SnAgCu solder interconnect

摘要

An analytical solution to predict electromigration-induced finger-shaped void growth in SnAgCu solder interconnect is developed based on mass diffusion theory. A quantitative nonlinear relation between the void propagation velocity and the shape evolution parameter is obtained. It is found that a circular void will grow at the lowest velocity, but as it collapses to a finger-shaped void it will grow at a faster velocity that is inversely proportional to the width. The void growth velocity predicted is consistent with the experimental observation. (C) 2014 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.