Large area nanosize array stamp for UV-based nanoimprint lithography fabricated by size reduction process

摘要

A novel size reduction process using electron beam lithography (EBL) combining with wet etching technique is developed as a possible solution for producing large area and low cost nanopattern stamp for UV-based nanoimprint lithography (UV-N1L). In the first step, a microstructure stamp with 1.4 urn periodical pore array and aspect ratio of 1:1 was formed over a 1 inch2 area on a quartz substrate. This process was carried out using common electron beam lithography (EBL) equipment, which was easily available in the modern integrated circuits (IC) semiconductor factory. Afterwards, with a controlled wet etching technique, the pore array was changed into tip patterns with the line width below 100 nm and the period keeping as before. The uniformities and nanopattern accuracies were investigated to identify its possibility as a UV-NIL stamp by AFM and SEM. Finally, as a demonstration, the as obtained stamp was used as a positive stamp to replicate the nanotips into UV-curable resist successfully by a UV-NIL process. The method developed for the mold of nanoimprint lithography would be a simple and low price approach to fabricate large area UV-NIL stamp and the nanotip array structures would be widely used in two dimensional (2D) photonic crystal application.