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首页> 外文期刊>Microelectronic Engineering >Simple and efficient method to fabricate nano cone arrays by FIB milling demonstrated on planar substrates and on protruded structures
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Simple and efficient method to fabricate nano cone arrays by FIB milling demonstrated on planar substrates and on protruded structures

机译:通过FIB铣削制造纳米锥阵列的简单有效方法在平面基板和凸起结构上得到了证明

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摘要

A simple, fast and efficient method is demonstrated for the fabrication of very homogeneous periodic nano-cone arrays on planar Si substrates by focused ion beam milling. The approach makes use of the actual shape of the ion beam by simply milling lines in vertical and horizontal direction with the lines separated by the targeted periodicity. If beam currents and, thus, beam diameters are chosen appropriately, this patterning approach results in nano-cone arrays with apex radii of 25 nm and below. Arrays with periodicities of 600, 300, and 150 nm are realized with minimum processing times of the order of 30 s for an area of 30 μm~2 without a change in the quality of the cones by area scaling. To a certain extent, height, aspect ratio, apex radius and shape of the individual cones can be varied using different beam diameters. While constant dwell times are used for planar samples, it is shown that homogeneous nano-cone arrays can only be realized on the whole surface of protruded rectangular mesa structures if the patterning strategy is adapted appropriately. In the successfully modified approach the dwell time is gradually decreased along the milled lines from the center of the array towards the edges and a frame like pattern is added at the edges of the protruded structures.
机译:通过聚焦离子束铣削,证明了一种简单,快速且有效的方法在平面Si衬底上制造非常均匀的周期性纳米锥阵列。该方法通过简单地铣削垂直和水平方向的线而使离子束的实际形状得到利用,这些线被目标周期性隔开。如果适当地选择束流,并因此选择束直径,则该图案化方法导致具有25nm及以下的顶半径的纳米锥阵列。对于30μm〜2的面积,以最小的30 s的处理时间实现了周期为600、300和150 nm的阵列,而不会因面积缩放而改变锥体的质量。在一定程度上,可以使用不同的光束直径来改变单个锥体的高度,纵横比,顶点半径和形状。虽然将恒定的停留时间用于平面样品,但已表明,如果适当地调整构图策略,则均匀的纳米锥阵列只能在凸出的矩形台面结构的整个表面上实现。在成功修改的方法中,沿铣削线从阵列的中心向边缘逐渐缩短停留时间,并在突出结构的边缘添加了类似框架的图案。

著录项

  • 来源
    《Microelectronic Engineering》 |2012年第10期|p.242-245|共4页
  • 作者

    M. Rommel; A.J. Bauer; L. Frey;

  • 作者单位

    Fmunhofer Institute for Integrated Systems and Device Technology (IISB), Schottkystrasse 10, 91058 Erlangen, Germany;

    Fmunhofer Institute for Integrated Systems and Device Technology (IISB), Schottkystrasse 10, 91058 Erlangen, Germany;

    Fmunhofer Institute for Integrated Systems and Device Technology (IISB), Schottkystrasse 10, 91058 Erlangen, Germany,Chair of Electron Devices, University of Erlangen-Nuremberg, Cauerstrasse 6, 91058 Erlangen, Germany;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    focused ion beam; FIB; FIB patterning; patterning strategy; nano cone array; tip array;

    机译:聚焦离子束FIB;FIB图案;模式化策略;纳米锥阵列尖端阵列;

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